Title:
SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/166966
Kind Code:
A1
Abstract:
A substrate processing device 10 comprising: a vacuum processing chamber 16; a substrate holder 50 that holds a substrate S within the vacuum processing chamber 16; sealing that forms a closed space 82 between the substrate holder 50 and the substrate S held by the substrate holder 50; a gas path 84 that communicates with the space 82; a gas supply path 86 that supplies a gas into the gas path 84; a gas discharge path 88 that discharges the gas from within the gas path 84; a first valve 90 that can open and close between the gas path 84 and the gas supply path 86; and a second valve 92 that can open and close between the gas path 84 and the gas discharge path 88.
Inventors:
NAITO TSUNAHIKO (JP)
YAMAUCHI HIDEYUKI (JP)
YAMAUCHI HIDEYUKI (JP)
Application Number:
PCT/JP2023/004751
Publication Date:
September 07, 2023
Filing Date:
February 13, 2023
Export Citation:
Assignee:
SUMITOMO HEAVY INDUSTRIES ION TECH CO LTD (JP)
International Classes:
H01L21/265; H01J37/20; H01J37/317; H01L21/683
Foreign References:
| JP2000003879A | 2000-01-07 | |||
| JP2015220441A | 2015-12-07 | |||
| JP2000349139A | 2000-12-15 | |||
| JPH11330215A | 1999-11-30 | |||
| JP2014216503A | 2014-11-17 |
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
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