Title:
SUBSTRATE PROCESSING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2015/016149
Kind Code:
A1
Abstract:
[Problem] To provide: a substrate processing device capable of improving the quality of a semiconductor device and improving production throughput; a method for producing a semiconductor device; and a recording medium. [Solution] A substrate processing device having: a processing vessel for storing a substrate obtained by forming a modified layer on an Si-containing film; a removal-agent supply unit for supplying a removal agent to the substrate; a processing-gas supply unit for supplying a processing gas containing two or more halogens to the substrate; and a control unit for controlling the removal-agent supply unit and the processing-gas supply unit so as to execute a modified-layer removal step for supplying the removal agent to the substrate and a film removal step for supplying the processing gas to the substrate.
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Inventors:
TSUBOTA YASUTOSHI (JP)
HIYAMA SHIN (JP)
WADA YUICHI (JP)
KAMEDA KENJI (JP)
HIYAMA SHIN (JP)
WADA YUICHI (JP)
KAMEDA KENJI (JP)
Application Number:
PCT/JP2014/069701
Publication Date:
February 05, 2015
Filing Date:
July 25, 2014
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2002113700A | 2002-04-16 | |||
| JP2010245512A | 2010-10-28 | |||
| JPH11214512A | 1999-08-06 | |||
| JPH06204191A | 1994-07-22 | |||
| JP2004349616A | 2004-12-09 | |||
| JPH06196455A | 1994-07-15 | |||
| JPH08172079A | 1996-07-02 |
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