Title:
SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND VAPORIZATION SYSTEM
Document Type and Number:
WIPO Patent Application WO/2017/009997
Kind Code:
A1
Abstract:
In order to provide a configuration that reduces the residue within a vaporizer while significantly enhancing vaporization performance, provided is a configuration that is equipped with: a vaporization chamber that has one end section and another end section; a first liquid supplying section that is connected to the vaporization chamber at the other end section and supplies, toward the one end section, a mixed liquid containing a first carrier gas mixed with a liquid starting material; and a second liquid supplying section that supplies, toward the mixed liquid at the one end section, a second carrier gas from the peripheral edge sides of the one end section toward the center thereof.
Inventors:
MORIKAWA ATSUSHI (JP)
SHIMADA MASAKAZU (JP)
KASAI TAKESHI (JP)
SUZAKI KENICHI (JP)
YAMAZAKI HIROHISA (JP)
SHIMADA MASAKAZU (JP)
KASAI TAKESHI (JP)
SUZAKI KENICHI (JP)
YAMAZAKI HIROHISA (JP)
Application Number:
PCT/JP2015/070396
Publication Date:
January 19, 2017
Filing Date:
July 16, 2015
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
C23C16/455; B01J7/00; H01L21/31
Foreign References:
| JP2000017438A | 2000-01-18 | |||
| JP2013023700A | 2013-02-04 |
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