Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2019/186655
Kind Code:
A1
Abstract:
In order to enable uniform substrate processing to be performed, the present invention comprises: a processing chamber for processing a substrate; a substrate holding unit for holding the substrate; a gas introduction unit for introducing a cooling gas into the processing chamber; an exhaust unit for discharging the cooling gas supplied to the processing chamber; a plurality of microwave generators for generating microwaves; a temperature measuring unit for measuring the temperatures at a center portion and an edge portion of the substrate held by the substrate holding unit; and a control unit constituted in such a manner as to control, in response to the temperatures of center portion and the edge portion of the substrate measured by the temperature measuring unit, the gas introduction unit and the plurality of microwave generators so as to adjust the supply flow rate of the cooling gas introduced from the gas introduction unit while stopping at least one of the plurality of microwave generators.

Inventors:
SASAKI SHINYA (1 Yasuuchi 2-chome, Yatsuo-machi, Toyama-sh, Toyama 93, 〒9392393, JP)
Application Number:
JP2018/012175
Publication Date:
October 03, 2019
Filing Date:
March 26, 2018
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KOKUSAI ELECTRIC CORPORATION (3-4 Kandakaji-cho, Chiyoda-ku TOKYO, 45, 〒1010045, JP)
International Classes:
H01L21/268; H01L21/324
Foreign References:
JP2015103726A2015-06-04
US20170135163A12017-05-11
JP2017063095A2017-03-30
JP2009301764A2009-12-24
JP2013058652A2013-03-28
Attorney, Agent or Firm:
POLAIRE I.P.C. (13-11, Nihonbashikayabacho 2-chome Chuo-k, Tokyo 25, 〒1030025, JP)
Download PDF: