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Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/187163
Kind Code:
A1
Abstract:
The present invention provides a method for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively stacked, said method comprising: a step for forming an oxide film by selectively oxidizing the superficial layer of the exposed surface of the silicon germanium layer using a gas that contains oxygen and fluorine radicalized with use of a remote plasma; and a step for removing the thus-formed oxide film.

Inventors:
TAKAHASHI NOBUHIRO (JP)
SHIMIZU AKITAKA (JP)
ASADA YASUO (JP)
Application Number:
PCT/JP2021/008679
Publication Date:
September 23, 2021
Filing Date:
March 05, 2021
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Domestic Patent References:
WO2018180670A12018-10-04
Foreign References:
JP2019507505A2019-03-14
US20190006175A12019-01-03
US20190019681A12019-01-17
JP2016143781A2016-08-08
JP2007214390A2007-08-23
Attorney, Agent or Firm:
KANEMOTO, Tetsuo et al. (JP)
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