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Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/118645
Kind Code:
A1
Abstract:
The present invention secures the product rate and provides thin silicon substrates. The device: comprises a laser light source (150), a laser-focusing unit (160) that irradiates laser light (190) from the laser light source (150) toward the surface (101) of a substrate (10) and focuses the laser light in the interior of the substrate (10), and a positioning means that contactlessly disposes the laser-focusing unit (160) above the substrate (10); and forms a modified layer (14) inside the substrate (10) by moving the laser-focusing unit (160) relative to the substrate (10). The device is configured so that the laser-focusing unit (160) focuses the laser light (190) symmetrically around the optical axis and, inside the substrate (10), the laser-focusing unit (160) causes light impinging on the outer circumference of the laser-focusing unit (160) to converge more than light impinging on the inner circumference of the laser-focusing unit (160).

Inventors:
KUNISHI YOSUKE (JP)
SUZUKI HIDEKI (JP)
MATSUO RIKA (JP)
IKENO JUNICHI (JP)
Application Number:
PCT/JP2013/052322
Publication Date:
August 15, 2013
Filing Date:
February 01, 2013
Export Citation:
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Assignee:
SHINETSU POLYMER CO (JP)
UNIV SAITAMA NAT UNIV CORP (JP)
International Classes:
B23K26/40; B23K26/00; B23K26/04; B23K26/06; B23K26/08; B23K26/38; B28D5/00; H01L21/304
Foreign References:
JP2011155070A2011-08-11
JP2009200383A2009-09-03
JP2008078236A2008-04-03
JP2012016722A2012-01-26
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (JP)
Hidekazu Miyoshi (JP)
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Claims:



 
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