Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/179333
Kind Code:
A1
Abstract:
A substrate processing method for implementing predetermined processing using a substrate processing device provided with: two processing units (11a, 11b) which respectively implement substrate processing with respect to two substrates to be processed; a gas supply mechanism (14) which supplies a gas to the processing units (11a, 11b) independently; and a common exhaust mechanism (15) which exhausts the gas in the processing units (11a, 11b) at once. The substrate processing method comprises: performing a first mode in which HF gas and NH3 gas are supplied to the processing unit (11a) without supplying HF gas to the processing unit (11b); then, performing a second mode in which HF gas and NH3 gas are supplied to the processing units (11a, 11b) under the same gas condition; and, in the first mode, preventing the occurrence of a pressure difference in the processing units (11a, 11b).
Inventors:
TODA SATOSHI (JP)
TAKAHASHI TETSURO (JP)
TAKAHASHI TETSURO (JP)
Application Number:
PCT/JP2017/008590
Publication Date:
October 19, 2017
Filing Date:
March 03, 2017
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; C23C16/455; H01L21/302
Foreign References:
| JP2004131760A | 2004-04-30 | |||
| JP2011529136A | 2011-12-01 | |||
| US20110031214A1 | 2011-02-10 |
Attorney, Agent or Firm:
TAKAYAMA Hiroshi (JP)
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