Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/184342
Kind Code:
A1
Abstract:
A substrate processing method and a substrate processing device for forming a low-resistance, metal-containing nitride film are provided. This substrate processing method involves: a step for preparing the substrate inside of a treatment container; a step for forming a metal-containing nitride film on the substrate by repeating a first prescribed cycle involving steps for alternately supplying an organic metal-containing gas and a nitrogen-containing gas; and a step in which a second prescribed cycle is repeated which comprises a step for generating plasma in the treatment container and reforming the metal-containing nitride film, a step for forming the metal-containing nitride film and a step for reforming the metal-containing nitride film.
Inventors:
TAKAHASHI TSUYOSHI (JP)
NUNOSHIGE YU (JP)
NUNOSHIGE YU (JP)
Application Number:
PCT/JP2020/009209
Publication Date:
September 17, 2020
Filing Date:
March 04, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/455; C23C16/34; C23C16/50; H01L21/285
Foreign References:
JP2017120884A | 2017-07-06 | |||
JP2003022985A | 2003-01-24 | |||
JP2011166032A | 2011-08-25 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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