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Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/181604
Kind Code:
A1
Abstract:
This substrate processing method comprises a holding step, a liquid supply step, a film thickness measurement step, and a plasma step. In the holding step, a substrate-holding part holes a substrate. In the liquid supply step, a processing liquid is supplied from a nozzle to a main surface of the substrate held by the substrate-holding part. In the film thickness measurement step, a sensor measures the film thickness of the processing liquid on the main surface of the substrate. In the plasma step, at least one of the distance between a plasma source and the substrate, the output voltage being applied to the plasma source, and the flow rate of a processing gas supplied between the plasma source and the substrate is changed on the basis of a measured film thickness, which is the film thickness measured by the sensor, and an active species produced from the plasma generated by the plasma source is supplied to a liquid film.

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Inventors:
SHIBATA SHUICHI (JP)
NISHIDE HAJIME (JP)
Application Number:
PCT/JP2022/007209
Publication Date:
September 01, 2022
Filing Date:
February 22, 2022
Export Citation:
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Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H05H1/24; H01L21/027; H01L21/304
Foreign References:
JP2000150349A2000-05-30
JP2020132440A2020-08-31
JP2002053312A2002-02-19
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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