Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/216105
Kind Code:
A1
Abstract:
A substrate processing method according to an embodiment of the present invention comprises: a preparation step of mounting a substrate on a support inside a chamber; a first cleaning step including a step of removing a natural oxide film disposed on the substrate by spraying a first cleaning gas into the chamber; a growth step of growing a thin film in a growth region of one surface of the substrate by spraying a process gas into the chamber; and a step of generating an inductively coupled plasma inside the chamber in the first cleaning step, wherein the temperature inside the chamber is 300 °C to 750 °C. Therefore, according to embodiments of the present invention, a cleaning process for removing the oxide film formed on the growth region of the substrate is performed prior to the growth process. Accordingly, a selective growth process can be easily performed on a substrate, and the quality of a thin film can be improved.
Inventors:
PARK KYUNG RAN (KR)
PARK KWANG SU (KR)
CHAE WON UK (KR)
CHOI DONG HWAN (KR)
CHOI CHEOL YOUNG (KR)
PARK KWANG SU (KR)
CHAE WON UK (KR)
CHOI DONG HWAN (KR)
CHOI CHEOL YOUNG (KR)
Application Number:
PCT/KR2022/005103
Publication Date:
October 13, 2022
Filing Date:
April 08, 2022
Export Citation:
Assignee:
JUSUNG ENG CO LTD (KR)
International Classes:
H01L21/02; C30B25/10; H01J37/32; H01L21/67
Domestic Patent References:
| WO2007100528A2 | 2007-09-07 |
Foreign References:
| KR20180011428A | 2018-02-01 | |||
| KR20040007533A | 2004-01-24 | |||
| KR102067184B1 | 2020-01-16 | |||
| KR20040037162A | 2004-05-04 |
Attorney, Agent or Firm:
NAM, Seung-Hee (KR)
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