Title:
SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2024/069683
Kind Code:
A1
Abstract:
Provided is technology that makes it possible to improve film thickness uniformity and burying properties in the formation of a film. In the present invention, a cycle in which the following steps are executed in the following order on a substrate is repeated a prescribed number of times: (a) a step for supplying a first reforming gas, which is an inorganic halogen-element-containing gas; (b) a step for supplying a raw-material gas; (c) a step for supplying a second reforming gas, which is an inorganic halogen-element-containing gas; and (d) a step for supplying a reactant gas.
Inventors:
OGAWA ARITO (JP)
SEINO ATSURO (JP)
SEINO ATSURO (JP)
Application Number:
PCT/JP2022/035643
Publication Date:
April 04, 2024
Filing Date:
September 26, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/205
Foreign References:
| JP2019033228A | 2019-02-28 | |||
| US20180166270A1 | 2018-06-14 | |||
| JP2022118060A | 2022-08-12 | |||
| JP2022110465A | 2022-07-29 | |||
| JP2022079865A | 2022-05-27 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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