Title:
SUBSTRATE PROCESSING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2024/047713
Kind Code:
A1
Abstract:
The present invention forms a film on a substrate by performing a cycle which includes the following steps a prescribed number of times: (a) a step for forming a first layer on a substrate by supplying a first starting material and an additive thereto, and as a result, generating a second starting material which is more chemically stable than is the first starting material, and causing adsorption to occur by exposing the first starting material and the second starting material to the surface of the substrate; (b) and a step for changing the first layer into a second layer by supplying a reactant to the substrate.
Inventors:
NAKATANI KIMIHIKO (JP)
SUYAMA NAGISA (JP)
NAGAHASHI TOMOYA (JP)
SUYAMA NAGISA (JP)
NAGAHASHI TOMOYA (JP)
Application Number:
PCT/JP2022/032455
Publication Date:
March 07, 2024
Filing Date:
August 29, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/316
Domestic Patent References:
| WO2018193538A1 | 2018-10-25 |
Foreign References:
| JP2011097017A | 2011-05-12 | |||
| JP2006287194A | 2006-10-19 | |||
| JP2012104695A | 2012-05-31 | |||
| US20030232514A1 | 2003-12-18 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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