Title:
SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM
Document Type and Number:
WIPO Patent Application WO/2008/029800
Kind Code:
A1
Abstract:
A substrate processing method is provided with a step of forming a prescribed pattern
by etching a low dielectric constant film formed on a substrate; a step of modification
to make a substance left after the etching process soluble to a prescribed liquid;
a step dissolving and removing the modified substance by supplying the substance
with the prescribed liquid; a step of silylating the surface of the etched surface
after the modified substance is dissolved and removed; and a step of baking the
substrate after the silylation process.
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Inventors:
FUJII, Yasushi (650 MitsuzawaHosaka-cho, Nirasaki-sh, Yamanashi 92, 4070192, JP)
藤井 康 (〒92 山梨県韮崎市穂坂町三ツ沢６５０番地 東京エレクトロン九州株式会社内 Yamanashi, 4070192, JP)
藤井 康 (〒92 山梨県韮崎市穂坂町三ツ沢６５０番地 東京エレクトロン九州株式会社内 Yamanashi, 4070192, JP)
Application Number:
JP2007/067206
Publication Date:
March 13, 2008
Filing Date:
September 04, 2007
Export Citation:
Assignee:
TOKYO ELECTRON LIMITED (3-6 Akasaka 5-chome, Minato-ku Tokyo, 81, 1078481, JP)
東京エレクトロン株式会社 (〒81 東京都港区赤坂五丁目３番６号 Tokyo, 1078481, JP)
FUJII, Yasushi (650 MitsuzawaHosaka-cho, Nirasaki-sh, Yamanashi 92, 4070192, JP)
東京エレクトロン株式会社 (〒81 東京都港区赤坂五丁目３番６号 Tokyo, 1078481, JP)
FUJII, Yasushi (650 MitsuzawaHosaka-cho, Nirasaki-sh, Yamanashi 92, 4070192, JP)
International Classes:
H01L21/768; H01L21/304; H01L21/306; H01L21/312
Attorney, Agent or Firm:
TAKAYAMA, Hiroshi (7th Floor Daiichi Shinwa Building, 10-8 Akasaka 2-chom, Minato-ku Tokyo 52, 1070052, JP)
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