Title:
SUBSTRATE PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2012/014724
Kind Code:
A1
Abstract:
Disclosed is a substrate processing method for forming a void along a prescribed line (12) in a silicon substrate (11). Said method includes: a first step in which elliptically polarized laser light (L), which has an ellipticity other than 1, is focused on a silicon substrate (11), thereby forming a plurality of modified spots (S) along a line (12) inside the silicon substrate (11), forming a modified region (7) including said modified spots (S); and a second step, after the first step, in which the silicon substrate (11) is anisotropically etched, said etching made to selectively progress along the modified region (7) to form a void in the silicon substrate (11). In the first step, the laser light (L) is focused on the silicon substrate (11) such that the direction in which the laser light (L) moves with respect to the silicon substrate (11) forms an angle of less than 45° with the polarization direction of the laser light (L), and the plurality of modified spots (S) are formed so as to line up, multiple spots wide, along the aforementioned line (12).
More Like This:
| JP07044601 | SHEET METAL CUTTING DRAWING DEVICE |
| JP2010184246 | APPARATUS FOR CUTTING CYLINDRICAL WORKPIECE |
| JP07241689 | PRODUCTION OF BENT TUBE JOINT RING FOR ENDOSCOPE |
Inventors:
SHIMOI Hideki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
下井 英樹 (〒58 静岡県浜松市東区市野町１１２６番地の１ 浜松ホトニクス株式会社内 Shizuoka, 〒4358558, JP)
下井 英樹 (〒58 静岡県浜松市東区市野町１１２６番地の１ 浜松ホトニクス株式会社内 Shizuoka, 〒4358558, JP)
Application Number:
JP2011/066361
Publication Date:
February 02, 2012
Filing Date:
July 19, 2011
Export Citation:
Assignee:
HAMAMATSU PHOTONICS K.K. (1126-1, Ichino-cho Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
浜松ホトニクス株式会社 (〒58 静岡県浜松市東区市野町１１２６番地の１ Shizuoka, 〒4358558, JP)
SHIMOI Hideki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
浜松ホトニクス株式会社 (〒58 静岡県浜松市東区市野町１１２６番地の１ Shizuoka, 〒4358558, JP)
SHIMOI Hideki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
International Classes:
B23K26/38; B23K26/00; B23K26/04; H01L21/306
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl. 1-1, Marunouchi 2-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)
Download PDF:
Claims: