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Title:
SUBSTRATE AND SUBSTRATE PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2013/115353
Kind Code:
A1
Abstract:
A thin silicon substrate is provided for which a product rate is maintained. A monocrystalline substrate (10) having a modified layer (14) having periodic structures having a different crystal orientation to the crystal orientation of the substrate (10) formed therein, said periodic structures being connected.

Inventors:
MATSUO RIKA (JP)
SUZUKI HIDEKI (JP)
KUNISHI YOSUKE (JP)
IKENO JUNICHI (JP)
Application Number:
PCT/JP2013/052327
Publication Date:
August 08, 2013
Filing Date:
February 01, 2013
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Assignee:
SHINETSU POLYMER CO (JP)
UNIV SAITAMA NAT UNIV CORP (JP)
International Classes:
B23K26/40; B23K26/06; B23K26/38; B28D5/00; H01L21/304
Foreign References:
JP2011003624A2011-01-06
JP2011224658A2011-11-10
JP2011155070A2011-08-11
JP2009200383A2009-09-03
JP2008078236A2008-04-03
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (JP)
Hidekazu Miyoshi (JP)
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Claims:



 
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