Title:
SUBSTRATE PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/130814
Kind Code:
A1
Abstract:
A substrate processing method comprises: a liquid film forming step of forming a liquid film of processing liquid on an upper surface of a substrate to a thickness greater than a height of a pattern; a discharge opening arranging step of arranging first and second discharge openings such that the first discharge opening faces a predetermined first region including a rotation center on the upper surface of the substrate, and such that the second discharge opening faces a predetermined second region surrounding the outside of the first region on the upper surface of the substrate; a first discharge step of discharging a low surface tension liquid-containing gas via the first discharge opening, the low surface tension liquid-containing gas including vapor of a low surface tension liquid having a greater specific gravity than air and a lower surface tension than the processing liquid, without discharging the low surface tension liquid-containing gas via the second discharge opening; and a second discharge step, after the first discharge step, of discharging the low surface tension liquid-containing gas via the second discharge opening without discharging the low surface tension liquid-containing gas via the first discharge opening.
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Inventors:
OTSUJI MASAYUKI (JP)
Application Number:
PCT/JP2017/001552
Publication Date:
August 03, 2017
Filing Date:
January 18, 2017
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/304; G02F1/13; G02F1/1333; G11B5/84; G11B7/26
Foreign References:
| JP2004128495A | 2004-04-22 | |||
| JP2008078329A | 2008-04-03 | |||
| JP2008198741A | 2008-08-28 |
Attorney, Agent or Firm:
INAOKA, Kosaku et al. (JP)
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