Title:
SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DIMMING-TYPE LIGHTING DEVICE, SELF LIGHT-EMITTING DISPLAY DEVICE, SOLAR CELL AND REFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/168553
Kind Code:
A1
Abstract:
Provided are: a substrate for a semiconductor device that is suitable for use in a semiconductor device; a semiconductor device and a reflective liquid crystal display device that use the substrate; and a lighting device, display device and solar cell that use the semiconductor device. The substrate comprises: an aluminum base material; an aluminum porous anodic oxide film formed on both surfaces of the base material; and a protective layer comprising a silicon-containing, non-porous oxide formed on at least one surface of the anodic oxide film. The anodic oxide film warps in the compression direction at room temperature.
Inventors:
SATO KEIGO (JP)
MAEHARA YOSHIKI (JP)
KAITO RYOZO (JP)
YUYA SHIGENORI (JP)
MAEHARA YOSHIKI (JP)
KAITO RYOZO (JP)
YUYA SHIGENORI (JP)
Application Number:
PCT/JP2013/061873
Publication Date:
November 14, 2013
Filing Date:
April 23, 2013
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C25D11/18; C23C28/04; G02F1/1335; H01L51/42; H01L51/50; H05B33/02
Foreign References:
JP2011181887A | 2011-09-15 | |||
JP2011233874A | 2011-11-17 | |||
JP2001172795A | 2001-06-26 | |||
JP2000349320A | 2000-12-15 | |||
JPS57174497A | 1982-10-27 |
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Mochitoshi Watanabe (JP)
Mochitoshi Watanabe (JP)
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