Title:
SUBSTRATE TABLE FOR GROWING SINGLE CRYSTAL DIAMONDS BY USING MICROWAVE PLASMA TECHNOLOGY AND GROWING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/196341
Kind Code:
A1
Abstract:
Provided in the present invention is a substrate table for growing single crystal diamonds by using a microwave plasma technology. The substrate table comprises a circular microwave plasma substrate table. Above the substrate table, and sticking closely to a surface of the substrate table is spherical plasma excited that is by microwaves. A pit is formed in an axial symmetry center of the surface of the substrate table, and a crystal support used for diamond growth may be placed in the pit. An annular metal thin pipe is provided at the bottom of the pit around the crystal support, and small holes are formed in the thin pipe. The thin pipe is connected to a gas supply system, and the gas flow in the thin pipe is controlled by means of a gas flow meter. An annular metal thin pipe is provided at the top of the pit around the crystal support, and small holes are formed in the thin pipe. The thin pipe is connected to an air exhaust system, and the gas flow in the thin pipe is controlled by means of a gas flow meter. According to the solution, normal growth of diamonds on the upper surface of the seed crystal may be prevented from being affected by non-diamond carbon accumulated on the side face of the seed crystal, and at the same time, the surface growth speed of the seed crystal may be increased.
Inventors:
MAN WEIDONG (CN)
Application Number:
PCT/CN2020/089024
Publication Date:
October 07, 2021
Filing Date:
May 07, 2020
Export Citation:
Assignee:
SHANGHAI ZHENGSHI TECH CO LTD (CN)
International Classes:
C30B29/04
Domestic Patent References:
| WO2018197378A1 | 2018-11-01 |
Foreign References:
| CN108315816A | 2018-07-24 | |||
| CN108315817A | 2018-07-24 | |||
| CN110616459A | 2019-12-27 | |||
| CN104220635A | 2014-12-17 |
Attorney, Agent or Firm:
SHANGHAI CPTO INTELLECTUAL PROPERTY AGENCY CO. LTD (CN)
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