Title:
SUBSTRATE FOR THIN-FILM FORMATION, THIN-FILM SUBSTRATE AND LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO2005003414
Kind Code:
A8
Abstract:
A substrate for forming a single-crystal thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate consisting of a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the single-crystal thin film. The use of the sintered compact composed mainly of a ceramic material, especially translucent sintered compact, as the substrate enables formation thereon of a highly crystalline single-crystal thin film composed mainly of at least one member selected from among gallium nitride, indium nitride and aluminum nitride. Thus, there is provided a thin-film substrate furnished with a highly crystalline single-crystal thin film. Further, the use of the sintered compact composed mainly of a ceramic material enables providing of a light emitting element excelling in luminous efficiency.
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Inventors:
MIYAHARA KENICHIRO (JP)
Application Number:
PCT/JP2004/000051
Publication Date:
June 16, 2005
Filing Date:
January 07, 2004
Export Citation:
Assignee:
MIYAHARA KENICHIRO (JP)
International Classes:
C04B35/453; C04B35/58; C04B35/581; C04B35/645; C30B25/18; C30B29/40; H01L33/32; (IPC1-7): C30B29/38; C04B35/58; C04B35/00; H01L33/00
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