Title:
SUBSTRATE TREATING METHOD AND SUBSTRATE TREATING DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/034217
Kind Code:
A1
Abstract:
Hydrofluoric acid is supplied to a surface of a substrate so as to corrode and remove a naturally formed oxide film that is formed on the surface, whereby silicon is exposed on the surface of the substrate. Subsequently, a rinsing liquid such as alcohol is supplied to the surface of the substrate so that the hydrofluoric acid is rinsed off from the surface. Thereafter, a dopant liquid which is a liquid medicine containing a dopant is supplied to the surface of the substrate. The dopant liquid is brought into contact with the surface of the substrate, on which silicon not terminated with hydrogen is exposed, whereby a thin film of a monomolecular layer containing the dopant can be formed on the surface in a short time.
Inventors:
KIYAMA HIROKI (JP)
Application Number:
PCT/JP2013/065778
Publication Date:
March 06, 2014
Filing Date:
June 07, 2013
Export Citation:
Assignee:
DAINIPPON SCREEN MFG (JP)
International Classes:
H01L21/225; H01L21/304
Domestic Patent References:
| WO2011112546A1 | 2011-09-15 | |||
| WO2007043312A1 | 2007-04-19 |
Foreign References:
| JP2002100574A | 2002-04-05 | |||
| JP2010041000A | 2010-02-18 |
Other References:
JOHNNY C. HO ET AL.: "Controlled nanoscale doping of semiconductors via molecular monolayers", NATURE MATERIALS, vol. 7, January 2008 (2008-01-01), pages 62 - 67, P.S1-S10
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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