Title:
SUBSTRATE TREATMENT DEVICE, GAS NOZZLE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/188017
Kind Code:
A1
Abstract:
The present invention inhibits or prevents the interior of a source gas nozzle from being heated to a substrate treatment temperature when a source gas is supplied from the source gas nozzle into a reaction tube housing a substrate. Provided is a configuration comprising: a reaction tube which comprises a first member, and houses a substrate; and a source gas nozzle which is provided in the reaction tube, at least a part of which comprises a second member having a higher reflectance than the first member and having a rougher surface than the first member due to air babbles contained therein, and which supplies a source gas into the reaction tube.
Inventors:
TAKEBAYASHI YUJI (JP)
OGAWA UNRYU (JP)
FUJINO TOSHIKI (JP)
HADA YUKIHITO (JP)
TSUNODA NAOKO (JP)
OGAWA UNRYU (JP)
FUJINO TOSHIKI (JP)
HADA YUKIHITO (JP)
TSUNODA NAOKO (JP)
Application Number:
PCT/JP2019/008379
Publication Date:
October 03, 2019
Filing Date:
March 04, 2019
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/44; H01L21/316
Foreign References:
| JPS61199629A | 1986-09-04 | |||
| JPH0786178A | 1995-03-31 | |||
| JP2005079481A | 2005-03-24 | |||
| JP2013225648A | 2013-10-31 | |||
| JPH08119650A | 1996-05-14 | |||
| JP2018056300A | 2018-04-05 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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