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Title:
SUBSTRATE TREATMENT DEVICE, METAL FILM ETCHING METHOD, AND METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/099719
Kind Code:
A1
Abstract:
In order to facilitate replacement of worn dielectric members in a substrate treatment device, this substrate treatment device is provided with a Faraday shield disposed in a position opposite of an antenna with a structural member comprising a dielectric material therebetween, a first dielectric member disposed in a position opposite of the antenna and with the structural member and the Faraday shield therebetween, and a second dielectric member disposed in a position opposite of the antenna and with the structural member, the Faraday shield and the first dielectric member therebetween, wherein the second dielectric member is mounted on a protruding part formed in a vacuum vessel of the substrate treatment device.

Inventors:
NAKAGAWA YUKITO (JP)
Application Number:
PCT/JP2012/082868
Publication Date:
July 04, 2013
Filing Date:
December 19, 2012
Export Citation:
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Assignee:
CANON ANELVA CORP (JP)
International Classes:
H05H1/46; C23F4/00; H01L21/205; H01L21/302; H01L21/3065; H01L21/31; H01L43/12
Domestic Patent References:
WO2007032379A12007-03-22
Foreign References:
JP2009129817A2009-06-11
JP2011146409A2011-07-28
JP2008109155A2008-05-08
JP2008305558A2008-12-18
JP2000133497A2000-05-12
JPH11251303A1999-09-17
JP2005535117A2005-11-17
JP2005042143A2005-02-17
JP2012009659A2012-01-12
JP2012138411A2012-07-19
Attorney, Agent or Firm:
WATANABE Keisuke et al. (JP)
Keisuke Watanabe (JP)
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Claims: