Title:
SUBSTRATE TREATMENT DEVICE, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2019/176031
Kind Code:
A1
Abstract:
The present invention comprises a treatment chamber which accommodates a substrate, a gas supply system which supplies a treatment gas to the treatment chamber, said treatment gas including a compound that reacts with a metal, and a gas exhaust system which exhausts atmosphere from inside the treatment chamber, wherein the gas exhaust system comprises: a shared exhaust duct with communicates with the treatment chamber; a first exhaust duct which has one end connected to the shared exhaust duct with a first valve interposed therebetween, and which is configured of a resin that does not react with the compound; a second exhaust duct which has one end connected to the shared exhaust duct with a second valve interposed therebetween, and which is configured of a metal; a first exhaust device which is connected to the first exhaust duct; and a second exhaust device which is connected to the second exhaust duct.
Inventors:
INADA TETSUAKI (JP)
TATENO HIDETO (JP)
TATENO HIDETO (JP)
Application Number:
PCT/JP2018/010051
Publication Date:
September 19, 2019
Filing Date:
March 14, 2018
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/316; H01L21/31
Domestic Patent References:
| WO2013077321A1 | 2013-05-30 |
Foreign References:
| JP2002134492A | 2002-05-10 | |||
| JP2002013500A | 2002-01-18 | |||
| JPH0831814A | 1996-02-02 |
Attorney, Agent or Firm:
PATENT PROFESSIONAL CORPORATION IPWIN (JP)
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