Title:
SUBSTRATE TREATMENT METHOD AND PLASMA TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2023/127817
Kind Code:
A1
Abstract:
The disclosed substrate treatment method includes a step for preparing a substrate. The substrate includes a first region and a second region that provides an opening over the first region. The substrate treatment method also includes a step for preferentially forming a top section deposit on the top section of the second region by using a first plasma generated from a first gas. The substrate treatment method also includes a step for forming, in a side wall surface that demarcates the opening and the front surface of the top section deposit, a first film having a reduced thickness in the depth direction of said opening.
Inventors:
KATSUNUMA TAKAYUKI (JP)
HONDA MASANOBU (JP)
HONDA MASANOBU (JP)
Application Number:
PCT/JP2022/047973
Publication Date:
July 06, 2023
Filing Date:
December 26, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/31; H01L21/314; H01L21/316; H01L21/318
Foreign References:
| JP2021118315A | 2021-08-10 | |||
| JP2020119918A | 2020-08-06 | |||
| JP2021534589A | 2021-12-09 | |||
| JP2021077843A | 2021-05-20 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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