Title:
SUBSTRATE TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2017/110335
Kind Code:
A1
Abstract:
[Problem] To provide a technology whereby, at the time of performing plasma treatment to a substrate, freedom degree of treatment conditions that can be set for the plasma treatment can be increased, while suppressing deterioration of characteristics of a silicon oxide film or a metal oxide film, which is to be exposed to plasma.
[Solution] The present invention performs: a plasma treatment step for performing plasma treatment to a substrate on which a silicon oxide film or a metal oxide film is formed, said plasma treatment being to be performed using plasma obtained by bringing into a plasma state a treatment gas configured from a halogen compound; and then, a heat treatment step for heating the substrate to a temperature equal to or higher than 450°C in inert gas atmosphere or vacuum atmosphere in a state wherein the oxide film is exposed, said oxide film having been exposed to the plasma. Consequently, characteristics of the oxide film, said characteristics having been deteriorated due to the plasma treatment , are recovered.
Inventors:
NAGAKURA KOICHI (JP)
MORIMOTO TAMOTSU (JP)
UDA SHUICHIRO (JP)
SAITO TAKESHI (JP)
MORIMOTO TAMOTSU (JP)
UDA SHUICHIRO (JP)
SAITO TAKESHI (JP)
Application Number:
PCT/JP2016/084379
Publication Date:
June 29, 2017
Filing Date:
November 21, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/336; H01L29/78; H05H1/46
Foreign References:
| JPH05109883A | 1993-04-30 | |||
| JPS5651580A | 1981-05-09 | |||
| JP2014508424A | 2014-04-03 | |||
| JPS5145436B1 | 1976-12-03 |
Attorney, Agent or Firm:
INOUE, Toshio et al. (JP)
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