Title:
SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, METHOD FOR PRODUCING REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/141268
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a substrate with a multilayer reflective film, which is used for the production of a reflective mask blank for EUV lithography wherein dry etching using a Cl-based gas is carried out, and which is extremely reduced in the loss of a protective film due to the above-mentioned dry etching and wet cleaning after the dry etching; and the like.
The present invention is a substrate with a multilayer reflective film, which is used for the production of a reflective mask blank for EUV lithography, and which is characterized in that: the substrate with a multilayer reflective film comprises a substrate, a multilayer reflective film that is formed on the substrate and reflects EUV light, and a protective film that is formed on the multilayer reflective film and protects the multilayer reflective film; the protective film is formed of an alloy that contains at least two kinds of metals; and the alloy is a complete solid solution.
Inventors:
ONOUE TAKAHIRO (JP)
ORIHARA TOSHIHIKO (JP)
ORIHARA TOSHIHIKO (JP)
Application Number:
PCT/JP2013/057957
Publication Date:
September 26, 2013
Filing Date:
March 21, 2013
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
H01L21/027; G03F1/24; G03F1/48
Foreign References:
| JP2011192693A | 2011-09-29 | |||
| JP2004171034A | 2004-06-17 | |||
| JP2007294840A | 2007-11-08 | |||
| JP2002353123A | 2002-12-06 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
Patent business corporation Tsukuni (JP)
Patent business corporation Tsukuni (JP)
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