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Patent Searching and Data


Title:
SUPER-JUNCTION MOSFET DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/098626
Kind Code:
A1
Abstract:
Provided in the present invention is a super-junction MOSFET device, the device comprising a plurality of cellular structures. Each of the cellular structures comprises a drain terminal electrode, an N-type drain electrode layer, an N-type buffer layer, an N-type field stop region, a first P-type body region, a second P-type body region, a first P pillar, a second P pillar, an N pillar, a first N-type source region, a second N-type source region, a first P-type body contact region, a second P-type body contact region, a gate structure and a source terminal electrode, wherein the N-type field stop region is located in the N-type buffer layer; the vertical projection of the N-type field stop region on the N-type drain electrode layer is provided with a spacing region; and the doping concentration of the N-type field stop region is higher than the doping concentration of the N-type buffer layer. In the present invention, the N-type field stop region is introduced into the N-type buffer layer, and the vertical projection of the N-type field stop region on the N-type drain electrode layer is provided with the spacing region, such that not only can reverse recovery charges be reduced and a reverse recovery softness factor be improved, but the on-resistance of a device can also be reduced without increasing the leakage current of the device.

Inventors:
LI PING (CN)
MA RONGYAO (CN)
Application Number:
PCT/CN2022/134726
Publication Date:
June 08, 2023
Filing Date:
November 28, 2022
Export Citation:
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Assignee:
CHINA RESOURCES MICROELECTRONICS CHONGQING CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
CN113224164A2021-08-06
CN214848641U2021-11-23
CN102810567A2012-12-05
US20140367771A12014-12-18
CN112086507A2020-12-15
CN108899370A2018-11-27
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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