Title:
SUPER JUNCTION POWER TRANSISTOR AND PREPARATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2018/121600
Kind Code:
A1
Abstract:
The invention discloses a super junction power transistor and a preparation method thereof. The super junction power transistor comprises a first substrate type epitaxial layer (200) of a first doping type and a second substrate type epitaxial layer (201) of the first doping type disposed on the first substrate type epitaxial layer (200). A first doping type drain region and a plurality of second doping type columnar epitaxial doping regions (202) are formed in the first substrate type epitaxial layer (200). A plurality of trenches are provided in the second substrate type epitaxial layer (201), and a composite gate structure is formed in the trenches. A second doping type body region (207) is provided in the second substrate type epitaxial layer (201) between adjacent trenches, and a first doping type source region (208) is provided in the body region (207). A composite gate structure is formed using a double-layer substrate type epitaxial layer structure, in which the number of the composite gate structures is more than that of the columnar epitaxial doping regions (202), thereby forming more current channels and reducing the conducting resistance. At the same time, the doping concentration of the second substrate type epitaxial layer (201) is greater than that of the first substrate type epitaxial layer (200), so that the breakdown voltage can be increased. In addition, through the composite gate structure, the overlap area between the gate and the drain is reduced, the capacitance between the gate and the drain is reduced, and the switching speed is increased.
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Inventors:
LIU LEI (CN)
LIU WEI (CN)
YUAN YUANLIN (CN)
GONG YI (CN)
LIU WEI (CN)
YUAN YUANLIN (CN)
GONG YI (CN)
Application Number:
PCT/CN2017/118965
Publication Date:
July 05, 2018
Filing Date:
December 27, 2017
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| CN203659876U | 2014-06-18 | |||
| US20130168760A1 | 2013-07-04 | |||
| CN106057868A | 2016-10-26 | |||
| CN203659870U | 2014-06-18 | |||
| CN103681864A | 2014-03-26 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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