SUPER-JUNCTION POWER VDMOS HAVING EXTREMELY LOW REVERSE RECOVERY CHARGE

WIPO Patent Application WO/2020/151088

A1

The present invention relates to a super-junction power VDMOS having an extremely low reverse recovery charge, comprising an N-type substrate also serving as a drain and an N-type drift region. A first P column is provided in the N-type drift region; a first P-type body region is provided in the top of the first P column; an NMOS is provided in the first P-type body region; a SiO2 isolation layer is provided between the NMOS and the first P-type body region; and a first P-type heavily doped region is provided in the first P-type body region. Source metal of a super-junction VDMOS, source metal of the NMOS, and the first P-type heavily doped region are connected; the drain of the super-junction VDMOS serves as the drain of the super-junction power VDMOS; the gate of the super-junction VDMOS and the gate of the NMOS are connected and serve as the gate of the super-junction power VDMOS; the drain of the NMOS serves as the source of the super-junction power VDMOS; and an N-type drift region of the super-junction VDMOS is provided with a Schottky contact which is connected to the drain of the NMOS, so as to form a Schottky diode of which the cathode and anode are respectively connected to the drain and source in the structure provided by the present invention.

ZHU JING (CN)
TIAN TIAN (CN)
LI SHAOHONG (CN)
SUN WEIFENG (CN)
LU SHENGLI (CN)
SHI LONGXING (CN)

PCT/CN2019/081816

July 30, 2020

April 08, 2019

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UNIV SOUTHEAST (CN)

H01L29/06; H01L27/06; H01L29/78

CN108550623A	2018-09-18
CN202616237U	2012-12-19
CN108899370A	2018-11-27
CN103489917A	2014-01-01

NANJING RUIHONG PATENT & TRADEMARK AGENCY (ORDINARY PARTNERSHIP) (CN)

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