SUPPORT AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE

WIPO Patent Application WO/2005/093136

A1

[PROBLEMS] A support and a method for processing a semiconductor substrate in which sneaking of dopant to the surface of the semiconductor substrate can be suppressed sufficiently, and entrance of reaction gas to the rear surface of the semiconductor substrate can be suppressed. [MEANS FOR SOLVING PROBLEMS] A silicon semiconductor wafer (7) is mounted on the wafer supporting part (2) of a wafer support (1), a space is defined between the silicon semiconductor wafer (7) and a counterbore part (2a), hydrogen gas (5) flows through a gas supply passage (6) provided in a support rotating member (6a) located in the central region of the wafer support (1) and through a gas supply through hole part (3) formed in the central region of the counterbore part (2a), then flows in the space between the silicon semiconductor wafer (7) and the counterbore part (2a) along the silicon semiconductor wafer (7), and further flows through a gas discharge through hole part (4) inclining with respect to the vertical direction and provided for communication between the counterbore part (2a) and the outside surface of the wafer support (1) opposite to the surface where the silicon semiconductor wafer (7) is mounted before being discharged from the wafer support (1).

OKABE AKIRA (JP)
KAWAMOTO KAZUHISA (JP)

PCT/JP2004/016567

October 06, 2005

November 09, 2004

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CXE JAPAN CO LTD (JP)
OKABE AKIRA (JP)
KAWAMOTO KAZUHISA (JP)

C23C16/458; C30B25/12; C30B25/14; C30B29/06; (IPC1-7): C30B25/14; C30B29/06

US6444027B1	2002-09-03
US6184154B1	2001-02-06
JPH0475328A	1992-03-10
JP2002134425A	2002-05-10
JPH1179888A	1999-03-23

Ariyoshi, Noriharu (Hakata-ku Fukuoka-shi, Fukuoka 13, JP)

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