Title:
SURFACE ACOUSTIC WAVE ELEMENT AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2003/061119
Kind Code:
A1
Abstract:
A template (3) manufactured to have high−accuracy protrusions and recesses in advance by a lithography technology employing an electron beam is pressed against a resist film (2) applied onto a substrate (1) thus transferring a resist pattern (5). A thin metal film (6) for electrode is then formed on the resist pattern (5) formed by transfer and then it is stripped off by a lift−off method along with the resist film (2).
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Inventors:
HATTORI WATARU (JP)
Application Number:
PCT/JP2003/000362
Publication Date:
July 24, 2003
Filing Date:
January 17, 2003
Export Citation:
Assignee:
NEC CORP (JP)
HATTORI WATARU (JP)
HATTORI WATARU (JP)
International Classes:
H03H3/08; (IPC1-7): H03H3/08
Domestic Patent References:
WO1999005788A1 | 1999-02-04 |
Foreign References:
JPH01124284A | 1989-05-17 | |||
JPH0934130A | 1997-02-07 | |||
JP2000156557A | 2000-06-06 | |||
JPH10219400A | 1998-08-18 | |||
JPH11176720A | 1999-07-02 | |||
JPH0864931A | 1996-03-08 |
Attorney, Agent or Firm:
Ikeda, Noriyasu (4-10 Nishishinbashi 1-chom, Minato-ku Tokyo, JP)
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