Title:
SURFACE-EMITTING SEMICONDUCTOR LASER AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2018/235413
Kind Code:
A1
Abstract:
Disclosed is a surface-emitting semiconductor laser comprising: a semiconductor layer that includes a nitride semiconductor and is provided with a light-emitting region, and in which a first semiconductor layer, an active layer and a second semiconductor layer are layered in this order; and a first light-reflective layer and a second light-reflective layer opposing one another with the semiconductor layer therebetween. The first semiconductor layer includes, outside the light-emitting region, a high dislocation part having a higher average dislocation density than the average dislocation density of the light-emitting region.
Inventors:
NAKAJIMA HIROSHI (JP)
HAMAGUCHI TATSUSHI (JP)
MITOMO JUGO (JP)
SATO SUSUMU (JP)
ITO MASAMICHI (JP)
KAWANISHI HIDEKAZU (JP)
HAMAGUCHI TATSUSHI (JP)
MITOMO JUGO (JP)
SATO SUSUMU (JP)
ITO MASAMICHI (JP)
KAWANISHI HIDEKAZU (JP)
Application Number:
PCT/JP2018/015813
Publication Date:
December 27, 2018
Filing Date:
April 17, 2018
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01S5/183; H01S5/343
Domestic Patent References:
| WO2006054543A1 | 2006-05-26 | |||
| WO2015194243A1 | 2015-12-23 |
Foreign References:
| JP2011029607A | 2011-02-10 | |||
| JP2009164233A | 2009-07-23 | |||
| JP2012169481A | 2012-09-06 | |||
| US6233267B1 | 2001-05-15 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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