SURFACE-EMITTING SEMICONDUCTOR LASER

WIPO Patent Application WO/2019/088045

A1

This surface-emitting semiconductor laser includes: a semiconductor multi-layer structure that includes a first conductivity type layer, an active layer, and a second conductivity type layer, with light generated at the active layer resonating along the direction in which said layers are laminated and being extracted as laser light from the second conductivity type layer side; a current-constricting layer where the active layer and the second conductivity type layer are electrically connected via an opening; an insulation layer that is translucent to the light emission wavelength of the active layer; a first electrode that is electrically connected to the first conductivity type layer; and a second electrode that is electrically connected to the second conductivity type layer. Part of the insulation layer is exposed from the second electrode. The exposed insulation layer includes a first section having a first thickness, and a second section surrounding the first section and having a second thickness such that, in comparison to the first thickness, the output of light emitted from the active layer is reduced more than by the first section.

YAMAMOTO MASASHI (JP)
TSUJI YUJI (JP)
TAKAMIZU DAIJU (JP)
MURAYAMA MINORU (JP)

PCT/JP2018/040185

May 09, 2019

October 29, 2018

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ROHM CO LTD (JP)

H01S5/183

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US20160134083A1	2016-05-12

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