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Patent Searching and Data


Title:
SURFACE GRINDING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/225020
Kind Code:
A1
Abstract:
The present invention is a surface grinding method for a wafer, wherein: a wafer is prepared, the wafer having a first primary surface and a second primary surface on the side opposite the first primary surface, and having an edge part positioned between the first primary surface and the second primary surface; a release agent is applied to a portion of the second primary surface and to the edge part of the wafer to form a release agent layer; a resin layer covering the second primary surface and the entirety of the edge part is formed on the release agent layer; a base member is placed on the resin layer to obtain a wafer composite; the first primary surface of the wafer is ground in a state in which the wafer composite is supported and fixed at the position of the base member; the base member is removed from the wafer composite; the second primary surface of the wafer is ground in a state in which the wafer is supported and fixed at the position of the first primary surface; and the wafer is washed to remove the release agent layer and the resin layer remaining on the edge part of the wafer. Due to this configuration, a wafer surface grinding method is provided with which both surfaces of the wafer can be ground while preventing cracking of the wafer and preventing resin from remaining on the edge part.

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Inventors:
IGARASHI KENSAKU (JP)
Application Number:
PCT/JP2021/007004
Publication Date:
November 11, 2021
Filing Date:
February 25, 2021
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
B24B7/00; B24B1/00; H01L21/304
Foreign References:
JP2009148866A2009-07-09
JP2019165152A2019-09-26
JP2011216763A2011-10-27
JP2019009372A2019-01-17
JP2015038919A2015-02-26
JP2006261370A2006-09-28
US5622875A1997-04-22
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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