Title:
SURFACE PIN DEVICE
Document Type and Number:
WIPO Patent Application WO2001071819
Kind Code:
A3
Abstract:
A surface PIN (SPIN) device and a method of fabricating such a SPIN device. The SPIN device, when activated, confines carrier injection to a small volume near the surface of the device such that the device is sufficiently conductive to simulate a planar conductor. The SPIN device comprises a P+ region (108) and an N+ region (110) formed in an intrinsic (I) layer (106). The P+ and N+ regions are separated by a lateral length of intrinsic material of length L. The length L is approximately the carrier diffusion length. When DC bias is applied across the N+ and P+ regions carriers are injected into the intrinsic region (106) at a density exceeding 1018 carriers per cubic cm. The intrinsic region (106) is sufficiently thin to confine the carriers near the surface of the intrinsic region (106). As such, in the "on" state, the SPIN device simulates a conductive material. In the "off" state, the SPIN device is no longer conductive. Consequently, a planar array of SPIN devices can be fabricated and selectively activated to form a dynamic, reconfigurable antenna.
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Inventors:
TAYLOR GORDON C
ROSEN ARYE
FATHY ALY
SWAIN PRADYUMNA K
PERLOW STEWART M
ROSEN ARYE
FATHY ALY
SWAIN PRADYUMNA K
PERLOW STEWART M
Application Number:
PCT/US2001/008930
Publication Date:
February 28, 2002
Filing Date:
March 20, 2001
Export Citation:
Assignee:
SARNOFF CORP (US)
International Classes:
H01L29/868; H01Q1/38; H01Q9/04; H01Q21/06; H01Q23/00; H01Q25/00; (IPC1-7): H01L29/868; H01L21/329
Other References:
STABILE P J ET AL: "OPTICALLY CONTROLLED LATERAL PIN DIODES AND MICROWAVE CONTROL CIRCUITS", RCA REVIEW, RCA CORP. PRINCETON, US, vol. 47, no. 4, 1 December 1986 (1986-12-01), pages 443 - 456, XP000030920
PATENT ABSTRACTS OF JAPAN vol. 006, no. 226 (E - 141) 11 November 1982 (1982-11-11)
SRIDHAR S ET AL: "DIELECTRICALLY ISOLATED LATERAL HIGH VOLTAGE P-I-N RECTIFIERS FOR POWER ICS", INTERNATIONAL ELECTRON DEVICES MEETING 1992. SAN FRANCISCO, DEC. 13 - 16, 1992, INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), NEW YORK, IEEE, US, 13 December 1992 (1992-12-13), pages 245 - 248, XP000687421, ISBN: 0-7803-0818-2
PATENT ABSTRACTS OF JAPAN vol. 006, no. 226 (E - 141) 11 November 1982 (1982-11-11)
SRIDHAR S ET AL: "DIELECTRICALLY ISOLATED LATERAL HIGH VOLTAGE P-I-N RECTIFIERS FOR POWER ICS", INTERNATIONAL ELECTRON DEVICES MEETING 1992. SAN FRANCISCO, DEC. 13 - 16, 1992, INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), NEW YORK, IEEE, US, 13 December 1992 (1992-12-13), pages 245 - 248, XP000687421, ISBN: 0-7803-0818-2
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