Title:
SURFACE TREATMENT COMPOSITION, SURFACE TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/140592
Kind Code:
A1
Abstract:
Disclosed is a surface treatment composition which suppresses oxidation of metal wiring of a semiconductor substrate, thereby suppressing deterioration of planarity in a metal wiring portion due to abnormal oxidation. Also disclosed is a surface treatment composition which suppresses surface roughening of metal wiring or wedge-shaped defects (which may be hereinafter referred to as fangs) occurring in the interface between metal wiring and an insulating film or barrier metal film in a case where the insulating film or barrier metal film is present on a semiconductor substrate surface that contains the metal wiring.
Specifically disclosed is a surface treatment composition for treating a semiconductor substrate surface that contains metal wiring, said surface treatment composition containing (A) a compound that is represented by a specific structural formula and (B) a solvent that has a boiling point of 50-300°C at one atmospheric pressure, and having a pH of 4-11.
Inventors:
MORI, Yasumasa (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
森 康真 (〒40 東京都港区東新橋一丁目９番２号 ＪＳＲ株式会社内 Tokyo, 〒1058640, JP)
SHIDA, Hirotaka (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
仕田 裕貴 (〒40 東京都港区東新橋一丁目９番２号 ＪＳＲ株式会社内 Tokyo, 〒1058640, JP)
KAWAGUCHI, Kazuo (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
森 康真 (〒40 東京都港区東新橋一丁目９番２号 ＪＳＲ株式会社内 Tokyo, 〒1058640, JP)
SHIDA, Hirotaka (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
仕田 裕貴 (〒40 東京都港区東新橋一丁目９番２号 ＪＳＲ株式会社内 Tokyo, 〒1058640, JP)
KAWAGUCHI, Kazuo (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
Application Number:
JP2010/059277
Publication Date:
December 09, 2010
Filing Date:
June 01, 2010
Export Citation:
Assignee:
JSR CORPORATION (9-2 Higashi-Shinbashi 1-chome, Minato-ku Tokyo, 40, 〒1058640, JP)
ＪＳＲ株式会社 (〒40 東京都港区東新橋一丁目９番２号 Tokyo, 〒1058640, JP)
MORI, Yasumasa (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
森 康真 (〒40 東京都港区東新橋一丁目９番２号 ＪＳＲ株式会社内 Tokyo, 〒1058640, JP)
SHIDA, Hirotaka (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
仕田 裕貴 (〒40 東京都港区東新橋一丁目９番２号 ＪＳＲ株式会社内 Tokyo, 〒1058640, JP)
ＪＳＲ株式会社 (〒40 東京都港区東新橋一丁目９番２号 Tokyo, 〒1058640, JP)
MORI, Yasumasa (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
森 康真 (〒40 東京都港区東新橋一丁目９番２号 ＪＳＲ株式会社内 Tokyo, 〒1058640, JP)
SHIDA, Hirotaka (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
仕田 裕貴 (〒40 東京都港区東新橋一丁目９番２号 ＪＳＲ株式会社内 Tokyo, 〒1058640, JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Attorney, Agent or Firm:
SSINPAT PATENT FIRM (Gotanda Yamazaki Bldg. 6F, 13-6 Nishigotanda 7-chom, Shinagawa-ku Tokyo 31, 〒1410031, JP)