Title:
SURFACE TREATMENT COMPOSITION, PRODUCTION METHOD THEREFOR, SURFACE TREATMENT METHOD, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2018/163617
Kind Code:
A1
Abstract:
[Problem] To provide a means for sufficiently removing residue on the surface of a polished object to be polished that includes silicon nitride, silicon oxide, or polysilicon. [Solution] A surface treatment composition that: contains water and an anionic surfactant that has a molecular weight of no more than 1,000; and has a pH of less than 7. The surface treatment composition: has a ratio (molecular weight of the hydrophilic moiety/molecular weight of the hydrophobic moiety) between the hydrophilic molecular weight and the hydrophobic molecular weight of the anionic surfactant of at least 0.4 (the hydrophobic moiety being a C4 or higher hydrocarbon group and the hydrophilic moiety being a moiety excluding the hydrophobic moiety and counter ions); and is used for surface treating a polished object to be polished that includes at least one type selected from the group consisting of silicon nitride, silicon oxide, and polysilicon.
Inventors:
ISHIDA YASUTO (JP)
Application Number:
PCT/JP2018/001646
Publication Date:
September 13, 2018
Filing Date:
January 19, 2018
Export Citation:
Assignee:
FUJIMI INC (JP)
International Classes:
C11D1/22; C11D1/14; C11D1/28; C11D1/29; C11D1/34; C11D3/37; H01L21/304
Domestic Patent References:
| WO2013162020A1 | 2013-10-31 |
Foreign References:
| JP2010163608A | 2010-07-29 | |||
| JP2007053214A | 2007-03-01 |
Attorney, Agent or Firm:
HATTA & ASSOCIATES (JP)
Download PDF: