Title:
SURFACE TREATMENT METHOD FOR SEMICONDUCTOR SUBSTRATES, AND SURFACE TREATMENT AGENT COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2021/235479
Kind Code:
A1
Abstract:
This surface treatment method for semiconductor substrates treats a main surface of a semiconductor substrate which has, on the main surface, a pattern formation region where a pattern having a relief structure with a pattern size of 30 nm or less is formed, and a bevel region that is formed on the periphery of the pattern formation region; and this surface treatment method for semiconductor substrates comprises a surface treatment step wherein a surface treatment agent composition that contains a silylating agent is brought into contact with the pattern formation region and the bevel region on the main surface of the semiconductor substrate. With respect to the surface of the silicon oxide substrate, which has been surface treated by being brought into contact with the surface treatment agent composition, the IPA receding angle is 3° or more at the room temperature of 25°C and/or the water receding angle is 40° or more at the room temperature of 25°C.
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Inventors:
OKUMURA YUZO (JP)
FUKUI YUKI (JP)
SHIOTA SAORI (JP)
TERUI YOSHIHARU (JP)
KUMON SOICHI (JP)
FUKUI YUKI (JP)
SHIOTA SAORI (JP)
TERUI YOSHIHARU (JP)
KUMON SOICHI (JP)
Application Number:
PCT/JP2021/018954
Publication Date:
November 25, 2021
Filing Date:
May 19, 2021
Export Citation:
Assignee:
CENTRAL GLASS CO LTD (JP)
International Classes:
C11D17/08; C11D7/04; C11D7/08; C11D7/18; C11D7/26; C11D7/32; C11D7/50; H01L21/304
Domestic Patent References:
| WO2013132881A1 | 2013-09-12 | |||
| WO2018193841A1 | 2018-10-25 |
Foreign References:
| JP2010114414A | 2010-05-20 | |||
| JP2009194246A | 2009-08-27 | |||
| JP2010114414A | 2010-05-20 | |||
| JP2020089228A | 2020-06-04 | |||
| JP2020089232A | 2020-06-04 |
Attorney, Agent or Firm:
HAYAMI Shinji (JP)
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