Title:
SUSCEPTOR AND METHOD FOR PRODUCING EPITAXIAL WAFER USING SAME
Document Type and Number:
WIPO Patent Application WO/2012/120787
Kind Code:
A1
Abstract:
The present invention is a susceptor for supporting a semiconductor substrate when performing vapor-phase growth of an epitaxial layer, the susceptor being characterized in that: a counterbore is formed on the upper surface of the susceptor so as to have a semiconductor substrate positioned therein the counterbore; the counterbore comprises a two-level structure having an upper level counterbore section for supporting the outer edge section of the semiconductor substrate, and a lower level counterbore section formed so as to be at a lower level and nearer the center than the upper level counterbore section is; through-holes extending to the rear surface of the susceptor and being open during the performing of the vapor-phase growth are formed in the lower level counterbore section; and a groove is provided on the rear-surface side of the susceptor in a location corresponding to the upper level counterbore section. As a result, it is possible to provide a susceptor that: lowers the temperature at the sites on the outer peripheral section of the semiconductor substrate which correspond to the upper level counterbore section on the rear-surface side of the susceptor; holds the thermal conditions in the outer peripheral section and the inner peripheral section of the rear surface of the substrate constant; and is capable of suppressing the occurrence of rear-surface deposition on the rear surface of the substrate. It is also possible to provide a method for producing an epitaxial wafer using the susceptor.
Inventors:
OHNISHI MASATO (JP)
Application Number:
PCT/JP2012/000928
Publication Date:
September 13, 2012
Filing Date:
February 13, 2012
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
OHNISHI MASATO (JP)
OHNISHI MASATO (JP)
International Classes:
H01L21/205; C23C16/458; H01L21/683
Domestic Patent References:
| WO2003069029A1 | 2003-08-21 |
Foreign References:
| JP2009252920A | 2009-10-29 | |||
| JP2001010894A | 2001-01-16 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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