RELATED APPLICATION

[0001] This application claims priority to US Provisional Patent Application. No.

62/573,81 1 , filed October 18, 2017, titled "3D Flash Swath Optimization,*' which is hereby incorporated by reference in its entirety,

TECHNICAL FIELD

[0002] This disclosure relates to semiconductor inspection tools, and more specifically to user selection of swaths to he inspected on semiconductor die.

BACKGROUND

[0003] Semiconductor inspection tools may use time-delay integration (TDI) to inspect semiconductor die, in order to identify defects on the die. Such inspection tools use TDI to scan TDI swaths across the die, with respective TDI swaths being scanned and thus inspected sequentially. The inspection results may he compared to inspection results for other

semiconductor die of the same type, to identify de fects. Successive scanning of multiple TDI swaths is performed because the field of view of the inspection tool, and thus the TDI swath width, is typically less than the width of the die.

[0004] The swath layout is traditionally fixed for a given semiconductor die. For example, Figure 1 s hows a pian view of a semiconductor die 100 for which an inspection tool has a fixed layout of TDI swaths 11 0, starting from the top of the die 100. The inspection tool, focuses on the center of each TDI swath 110, as indicated by the center lines 1 12.

[0005] Such focusing is problematic, however, because the height of different portions of the semiconductor die 100 may vary. For example, Figure 2 shows a perspective view of the semiconductor die 100. The die 100 is a flash memory die that includes a plurality of Hash memory-cell arrays 102;. Each memory-cell array 1.02 has adjacent associated row-decoder ("X- Dec ") circuitry 104 and an adjacent page buffer 106, The die 100 further includes peripheral logic circuitry 1.08. As Figure 2 shows, the memory-cell arrays 102 are higher (e.g., 3-5 um higher) than the peripheral logic circuitry 108 (e.g., at a time during fabrication before a planarizing inter- layer dielectric has been: deposited above the. circuitry of Figures 1 and 2). This height difference exists because the flash memory cells of the memory-cell arrays 102. include oxide-nitride-oxide stacks that are absent from other circuitry such as the peripheral logic circuitry 1.08. Circuitry immediately adjacent to the memory-cell arrays 102, such as the row- decoder circuitry 104, occupies a transition region in which the die height transitions from a first value for the memory-cell arrays 102 to a second, lower value for the peripheral logic circuitry 108.

[0006] As seen in Figure 1, the center lines 1 12 representing the locations on which the inspection tool focuses may not pass through the row-decoder circuitry 104. As a result, the inspection tool may perform its scans with a focus that is not ideal or even suitable for the row- decoder circuitry .104, making it difficult or impossible to detect defects in the row-decoder circuitry 104, Furthermore, this problem may make it necessary to perform multiple passes along each TDI swath 1 10 using different focus offsets, thus increasing inspection time, decreasing inspection throughput, and increasing the time for setting up inspection recipes,

SUMMARY

[0007] Accordingly, there is a need for methods and systems of allowing users to specify swaths for inspection.

[0008] hi some embodiments, a method of semiconductor inspection is performed at a semiconductor-inspection system. In the method, user input is received that specifies a swath across a semiconductor die for inspection. The swath, has a width that is less than a width of the semiconductor die and that corresponds to. a field of view of the semiconductor-inspection system. The swath of the semiconductor die is inspected based on the user input. Data from inspecting the swath is processed to identify defects in the swath.

[0009] In some embodiments, a sernicondaetor-inspection system includes an inspection tool, one or more processors, and memory storing one or more programs for execution by the one or more processors. The one or more programs include instructions for performing the above method. In. some embodiments, a non-transitory computer-readable storage medium stores one or more programs for execution by one or more processors of a semiconductor-inspection system that includes an- inspection tool. The one or more programs include instructions for performing the above method.

BRIEF DESCRIPTION OF TBI DRAWINGS

[0010] For a batter understanding o f the various described implementations, reference should be made to the Detailed Description, below, in conjunction with the following drawings,

[0011] Figure 1 shows a plan view of a semiconductor die tor which an inspection tool has a fixed layout of time-delay integration (TDI) swaths.

[0012] .Figure 2 shows a perspective view of the semiconductor die of Figure 1 that illustrates a height difference between respective portions of the die.

[0013] Figure.3 shows, a plan view of a user-selectable layout, of swaths for the semiconductor die of Figures 1 and 2 in accordance with some embodiments.

[0014] Figure 4 is a flowchart showing a method of semiconductor inspection in accordance with some embodiments,

[0015] Figure -5 is a block diagram of a-semiconductor-inspection system in accordance with some embodiments.

[0016] Like reference numerals refer to corresponding parts throughout the drawings and specification.

DETAILED DESCRIPTION

[0017] Reference will now he made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In. the following detailed description, numerous specific details are set forth in order to provide a thorough, understanding of the various described embodiments. However, it will be apparent to one of ordinary skill in the art that the various described embodiments may be practiced without these specific details. In other instances, well-known methods, procedures, components, circuits, and networks have not been described in detail so as not to unnecessarily obscure aspects of the embodiments. [0010] To alleviate the problems caused by the fixed layout of the TDI swaths 1 10

(Figure 1), an inspection tool may allow the. positions of swaths on a die to he user-selectable. Figure 3 shows a plan view of a user-selectable layout of swaths 300 (e.g., TDI swaths) for the. semiconductor die 100 in accordance with some embodiments. The user may specify the location of each swath 300-1, 300-2, 300-3, and 300-4, The swaths 300 thus are user-selectable, in the example of Figure 3, the user has specified the locations of the swaths 300-1, 300-2, 300- 3, and 300-4 such that die center lines 112 of the swaths 300 pass through respective instances of the row-decoder circuitry 104, thereby allowing the inspection tool to focus on the row-decoder circuitry 104. As a result, the inspection tool may achieve higher quality, more precise inspection results for the row-decoder circuitry 104.

[0019] Figure 4 is a flowchart showing a method 400 of semiconductor inspection in accordance with some embodiments. The method 400 may be performed by a semiconductor- inspection system 500 (Figure 5) that includes a semiconductor inspection tool 504 and associated computer circuitry.

[0020] In the method 400, user input is received (402) specifying a swath across a semiconductor die (e.g., semiconductor die 100, Figures 1 -3) for inspection, in some

embodiments, the semiconductor die is a flash memory die. Alternatively, the die is another type of semiconductor device. In some embodiments, the user input is received through an input device 510 (Figure 5). Alternatively, the user input -was previously provided and stored as part of a recipe, and is received as part of retrieving the recipe (e.g., from the memory 51 1 or from a .remote, computer system communicatively coupled with the semiconductor-inspection system 500, Figure 5).

[0021] The swath (e.g., swath 300-1, 300-2, 300-3, or 300-4, Figure 3) has a width that is less than a width of the semiconductor die and th at corresponds to a field of view of the semiconductor-inspection system (e.g., of the inspection tool 504, Figure 5). in some embodiments, the input specifies (404) a point within the swath thai corresponds to a line across the swath. For example, the input specifies a center position within the width of the swath (e.g., by specifying a respecti ve cen ter line 1 12 or a point on a respective center line 112, Figure 3), In other examples, the input may specify another position offset above or below the center position within the width of the swath. The width of the swath may be fixed or variable. For example, the width may have a first value in a first mode of the inspection tool 504 and a second valoe in a second mode of the inspection tool 504, Th e first mode may be a normal field-of-view mode (e.g., with a swath width of 550 urn) and -the second, mode may be a reduced field-of-view mode (e.g., with a swath width of 280 um), in accordance with some embodiments.

[0022] In some embodiments, the semiconductor die includes a first portion having a first height, a second portion having a second height that is less than the first height, and a transition portion between the first portion and the second portion. The line passes (406) through the transition portion. For example, the first portion inch-ides at least part of an array of Hash memory cells (e.g., a memory-cell array 102, Figure- .3) and the second portion includes circuitry peripheral to the array of flash memory cells (e.g., peripheral logic circuitry 108. Figure 3). in this example, the transition portion may include row-decoder circuitry 104 that is adjacent to the array.

[0023] A wafer that contains the semiconductor die is. loaded into the inspection tool 504.

The wafer may be loaded before or after the user input is received in step 402.

[0024] in some embodiments, the semiconductor inspection tool 504 auto-focuses (408) on a portion of the swath (e.g., a portion corresponding to the line across the swath, such as the center line 1 12). The user thus may specify the portion, on which the semiconductor inspection tool 504 auto- focuses, in accordance with some embodiments, in some embodiments, a focus offset to be used to inspect the swath is determined (410). In some other embodiments, the Focus offset may have been previously determined and stored as part of a recipe used in the method 400. In. some embodiments (e.g., for which step 406 applies), the semiconductor inspection, tool 504 auto-focuses (412) on the transition portion (e.g., on row-decoder circuitry 104).

[0025] The swath of the semiconductor die is inspected (414) based on the user input

(e.g., in accordance with the auto-focusing), in some embodiments, time-delay integration is performed (416) to inspect the die, such that the swath is a TDI swath.

[0026] The data obtained from inspecting the swath is processed (418) to identify defects in the swath . For example, data obtained by inspecting the swath. Is compared to data obtained by inspecting the same swath on other die,

[0027] In some embodiments, the swath specified in step 402 is a first swath. The method 400 includes receiving user input specifying a plurality of swaths across the semiconductor die (e.g., all of the swaths 300- 1 , 300-2, 300-3, and 300-4, Figure 3) for inspection. The plurality of swaths includes the first swath (e.g.,. swath 300-1, 300-2, 300-3, or 300-4* Figure 3). Each swath of .the plurality of swatlis has a respective width that is less than the width of the ^' semiconductor die. Each swath, of the plurality of swaths may ha ve th e width of the first swath (e.g., a fixed width corresponding to a field of view of the inspection tool 504) or may have one or a plurality of available widths (e.g., with the. available widths corresponding to respective modes of the inspection tool ^' 504).

[0028] Each swath of the plurality of swaths is inspected based on the user input specifying the plurality of swaths (e.g., in accordance with the aiUo-fbcusing). The data obtained from inspecting each swath is processed to identify defects in the plurality of swaths,

[0029] In some, embodiments, the semiconductor die is a first semiconductor die and the method 400 includes inspecting the specified, swath for every -semiconductor die in a row or column on the wafer that includes the first semiconductor die (e.g., in a single pass, which may be performed through a singl e translation of the movable wafer chuck 506, Figure 5 ).

Furthermore, the specified swath may be inspected for all or a portion of the die on the wafer. The data obtained from inspecting the specified swath on multiple die is processed to identify defects.

[0030] The method 400 thus allows accurate inspection of a particular portion of a semiconductor die, by allowmgthe inspection tool to focus on that portion. Throughput, may be increased, by avoiding recipes that perform, multiple passes with different focus- offsets along the same swath. Similarly, the method 400 may reduce recipe set-up times. Furthermore, the swath or plurality of swaths being inspected may compose only part of the entire die. Throughput th us may also be increased by avoiding inspecting: portions of the die that are not of interest.

[0031] Figure 5 is a block diagram of a semiconductor-inspection system 500 in accordance with some embodiments. The semiconductor-inspection system 500 includes a semiconductor inspection tool 504 and associated computer circuitry, . including one or more processors 502 (e.g., CPUs), user interfaces 508, memory 5 1 1 a,nd one or more communication buses 503 interconnecting these components. The semiconductor-inspection system 500 may also include one or more network interfaces (wired and/or wireless, not shown) for communicating with (e.g. , retrieving recipes from and/or transmitting data to) remote -computer systems.

[0032] The inspection tool 504 includes an illumination source 505, a .movable wafer chuck 506, and a TDI senor array 507, Semiconductor wafers are loaded onto the movable wafer chuck 506,. which moves linearly (i.e., is linearly translated) during inspection of a swath, to allow TDI to be. performed. In some embodiments, the illumination source 505 is a broadband plasma (BBP) illumination source. .Alternatively, a different type of illuumination source 505 (e.g., a single- wavelength laser) is used.

[0033] The user interfaces 508 may include a display 509 and one or more input devices

510 (e.g., a keyboard, mouse, touch-sensitive surface of the display 509, etc.). A user may use the one or more input devices 510 to. specify swaths. For example, an image of a semiconductor die (e.g., the die 100, Figures 1-3) may be displayed on the display 509. The user may draw a center Sine 1 12 (Figure 3) or other line across a swath, select a point corresponding to die center line l 12 or other line across the swath, or otherwise provide input indicating the location of the swath.

[0033] Memory 51 1 includes volatile and/or non-volatile .memory. Memory 511 (e.g., the non-volatile memory within memory 511) includes a non-transitory computer-readable storage medium. Memory 51 1 optionally includes one or more storage devices remotely located from the processors 502 and/or a non-transitory computer-readable storage medium that is removably inserted into the server system 500. In. some embodiments, memory 51 1 (e.g., the non-transitory computer-readable storage medium of memory 51 1) stores the following modules and data, or a subset or superset thereof: an operating system 512 that includes procedures for handling various basic system services and for performing hardware-dependent tasks, a TDI inspection module- 514 (e.g., for performing all or a portion of steps 402-416 of the method 400, Figure 4), and a defect identification module 520 (e.g., for performing step 418 of the method 400, Figure 4), The. TDI inspection module 514 may include a swath -specification module 516 and/or an auto- focus module 518, and may store one or more recipes for performing die inspection.

[0035] The memory 51 1 (e.g., the non-transitory computer-readable storage medium of the memory 51 1 ) thus includes instructions for performing all or a portion of the method 400 (Figure 4). Each of the modules stored in the memory 511 corresponds to a set of instructions for perforating one or more functions described herein. Separate modules need not be implemented as separate software, programs. The modules and various subsets of the modules may be combined or otherwise re-arranged. In some embodiments, the memory 511 stores a subset or superset of the modules and/or data structures identified above.

[0036] Figure 5 is intended more as a functional description of the various features that may be present, in a semiconductor-inspection system than as a structural schematic. For example, the arrangement of the components of the inspection tool 504 may vary (e.g., in manners known in the art). Items shown separately could be combined and some items could be separated. Furthermore-, the functionality of the semicondutor-inspection system 500 may be split between multiple- devices. For example, a portion of the modules stored i n the memory 51 1 may alternatively be stored in one of more computer systems communicatively coupled with the seffiieonductor-inspeetion system 500 through one or more networks.

[0037] The foregoing description, for purpose of explanation, has been described wi th reference to specific embodiments. However, the illustrative discussions above are. not intended to be exhaustive or to limi t the- scope of the claims to the precise -forms disclosed. Many modifications and variations are possible in view of the above teachings. The embodiments were chosen in order to best explain the principles underlying the cl ai ms and their practical applications, to thereby enable others skilled in the art to best use the embodiments with various modifications as are suited to. the particular uses contemplated..