Title:
SWITCH DEVICE AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/103183
Kind Code:
A1
Abstract:
Provided in the present invention are a switch device and a memory. The switch device comprises a lower electrode, an upper electrode and a switch material layer sandwiched between the lower electrode and the upper electrode, wherein the switch material layer contains at least one element from among Te, Se and S; when the switch device is in a turned-on state, the switch material layer is in a liquid state, and a band gap thereof is 0; and when the switch device is in a turned-off state, the switch material layer is in a crystalline state, a Schottky barrier is formed between the switch material layer and the upper electrode, and a Schottky barrier is formed between the switch material layer and the lower electrode. A crystalline-liquid-crystalline phase-change switching mechanism of a switch material is applied to the switch device in the present invention, and the switch device has advantages such as a turn-on current being great, a leakage current being small, a threshold voltage being small, cells having a high consistency, being compatible with a CMOS process, the thermal stability being good, elements being simple, the toxicity being low, and being capable of realizing extreme atrophy; and a memory cell, such as a phase-change memory cell, a resistive memory cell, a ferroelectric memory cell and a magnetic memory cell, can be driven, thereby realizing high-density three-dimensional information storage.
Inventors:
ZHU MIN (CN)
SONG ZHITANG (CN)
SHEN JIABIN (CN)
JIA SHUJING (CN)
SONG ZHITANG (CN)
SHEN JIABIN (CN)
JIA SHUJING (CN)
Application Number:
PCT/CN2022/077349
Publication Date:
June 15, 2023
Filing Date:
February 23, 2022
Export Citation:
Assignee:
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS (CN)
International Classes:
G11C11/4063; G11C11/4074
Foreign References:
| CN113571635A | 2021-10-29 | |||
| CN111129070A | 2020-05-08 | |||
| CN112289618A | 2021-01-29 | |||
| US20080035907A1 | 2008-02-14 |
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (CN)
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