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Patent Searching and Data


Title:
SWITCH DEVICE, STORAGE DEVICE, AND MEMORY SYSTEM
Document Type and Number:
WIPO Patent Application WO/2019/198410
Kind Code:
A1
Abstract:
A switch device according to an embodiment of the present disclosure is provided with: a first electrode; a second electrode disposed facing the first electrode; and a switch layer disposed between the first electrode and the second electrode, and containing at least one chalcogen element selected from sulfur (S), selenium (Se), and tellurium (Te), wherein at least one among the first electrode and the second electrode contains at least one among germanium (Ge), phosphorus (P), and arsenic (As), as an additive element, together with carbon (C).

Inventors:
OHBA, Kazuhiro (4-14-1 Asahicho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
SEI, Hiroaki (4-14-1 Asahicho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
YASUDA, Shuichiro (4-14-1 Asahicho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
Application Number:
JP2019/010455
Publication Date:
October 17, 2019
Filing Date:
March 14, 2019
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION (4-14-1, Asahicho Atsugi-sh, Kanagawa 14, 〒2430014, JP)
International Classes:
H01L21/8239; G11C13/00; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
WO2016158430A12016-10-06
WO2016174979A12016-11-03
Foreign References:
US20160064666A12016-03-03
US20160284994A12016-09-29
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (3F Sawada Building, 15-9 Shinjuku 1-chome, Shinjuku-k, Tokyo 22, 〒1600022, JP)
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