SWITCHING ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SWITCHING ELEMENT

WIPO Patent Application WO/2016/157820

A1

Provided is a switching element in which it is made possible to improve ON-state retention performance and reduce OFF-state leak current. This switching element has a first electrode, a second electrode, and a resistance change layer provided between the first electrode and the second electrode. The resistance change layer comprises a first ion conduction layer in contact with the first electrode and a second ion conduction layer in contact with the second electrode. The first electrode contains a metal of the same type as that contained in the first ion conduction layer, the metal being distributed so as to decrease in concentration in the direction heading into the first electrode from the interface with the first ion conduction layer.

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BANNO NAOKI (JP)
TADA MUNEHIRO (JP)
OKAMOTO KOICHIRO (JP)

PCT/JP2016/001631

October 06, 2016

March 22, 2016

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NEC CORP (JP)

H01L45/00; H01L27/10; H01L27/105; H01L49/00

WO2011115188A1	2011-09-22
WO2013054515A1	2013-04-18
WO2010026663A1	2010-03-11

JP2012199441A

2012-10-18

SHIMOSAKA, NAOKI (JP)
Naoki Shimosaka (JP)

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