Title:
SWITCHING ELEMENT, SEMICONDUCTOR DEVICE, REWRITABLE LOGICAL INTEGRATED CIRCUIT, AND MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2008/001712
Kind Code:
A1
Abstract:
Typically provided is a switching element comprising a first insulating layer
(1003) having an opening and made of a material for preventing the diffusion of
metal ions, a first electrode (104) formed in the opening and containing a material
capable of supplying the metal ions, an ion conducting layer (105) disposed to
contact the upper face of the first electrode (104) and capable of conducting
the metal ions, and a second electrode (106) disposed to contact with the upper
face of the ion conducting layer (105) and made of a material incapable of supplying
the metal ions. The switching element is constituted such that its conducting
state between the first electrode (104) and the second electrode (106) is controlled
by applying a voltage between the first electrode (104) and the second electrode
(106).
Inventors:
SAKAMOTO TOSHITSUGU (JP)
Application Number:
PCT/JP2007/062674
Publication Date:
January 03, 2008
Filing Date:
June 25, 2007
Export Citation:
Assignee:
NEC CORP (JP)
SAKAMOTO TOSHITSUGU (JP)
SAKAMOTO TOSHITSUGU (JP)
International Classes:
H01L49/02; H01L21/82; H01L27/10; H01L45/00; H01L49/00
Domestic Patent References:
| WO2003094227A1 | 2003-11-13 |
Attorney, Agent or Firm:
MIYAZAKI, Teruo et al. (16th Kowa Bldg.9-20, Akasaka 1-chom, Minato-ku Tokyo, JP)
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