Title:
SWITCHING TRANSISTOR AND SEMICONDUCTOR MODULE
Document Type and Number:
WIPO Patent Application WO/2019/208034
Kind Code:
A1
Abstract:
[Problem] To provide a switching transistor and a semiconductor module which achieve further reduction in distortion in a signal. [Solution] A switching transistor provided with: a channel layer formed by a compound semiconductor, and having a sheet electron concentration of 1.7×1013 cm-2 or more; a barrier layer formed by a compound semiconductor of a different kind from that of the channel layer on the channel layer; a gate electrode provided on the barrier layer; and a source electrode and a drain electrode that are provided on the barrier layer with the gate electrode interposed therebetween.
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Inventors:
TANIGUCHI SATOSHI (JP)
YANAGITA MASASHI (JP)
TAKEUCHI KATSUHIKO (JP)
KANEMATSU SHIGERU (JP)
HIGASHI TAKANORI (JP)
YANAGITA MASASHI (JP)
TAKEUCHI KATSUHIKO (JP)
KANEMATSU SHIGERU (JP)
HIGASHI TAKANORI (JP)
Application Number:
PCT/JP2019/011679
Publication Date:
October 31, 2019
Filing Date:
March 20, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/338; H01L21/28; H01L21/336; H01L21/768; H01L29/417; H01L29/423; H01L29/49; H01L29/778; H01L29/78; H01L29/786; H01L29/812
Domestic Patent References:
| WO2006022453A1 | 2006-03-02 |
Foreign References:
| JP2016522991A | 2016-08-04 | |||
| JP2009302370A | 2009-12-24 | |||
| JP2011159795A | 2011-08-18 | |||
| JP2018064027A | 2018-04-19 | |||
| JP2017085060A | 2017-05-18 | |||
| JP2017539073A | 2017-12-28 | |||
| JP2012049216A | 2012-03-08 | |||
| JP2008235613A | 2008-10-02 | |||
| JP2015135965A | 2015-07-27 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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