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Patent Searching and Data


Title:
SYNAPTIC MECHANICS TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2020/222455
Kind Code:
A1
Abstract:
The present invention provides a synaptic mechanics transistor. More specifically, provided is a synaptic mechanics transistor comprising an ionic active layer forming a channel according to movement of ions, thereby being capable of implementing, in a single transistor, a series of steps of mechanical stimulation, change of resistance of a sensor element, conversion into an electrical pulse signal, and securing synaptic characteristics.

Inventors:
KIM DO HWAN (KR)
CHUNG YOON SUN (KR)
KIM JOO SUNG (KR)
KWEON HYUK MIN (KR)
Application Number:
PCT/KR2020/005268
Publication Date:
November 05, 2020
Filing Date:
April 22, 2020
Export Citation:
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Assignee:
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
H01L29/40; G06N3/063; H01L21/768; H01L21/8234; H01L45/00
Foreign References:
KR20160019682A2016-02-22
CN109473549A2019-03-15
US20020050611A12002-05-02
Other References:
HE, YONGLI ET AL.: "Electric-double-layer transistors for synaptic devices and neuromorphic systems", JOURNAL OF MATERIALS CHEMISTRY C, 11 May 2018 (2018-05-11), XP055756391, Retrieved from the Internet [retrieved on 20200709], DOI: https://doi.org/10.1039/C8TC00530C
KIM, YEONGIN ET AL.: "A bioinspired flexible organic artificial afferent nerve", SCIENCE, 1 June 2018 (2018-06-01), XP055756394, Retrieved from the Internet [retrieved on 20200709], DOI: 10.1126/ science .aao0098
Attorney, Agent or Firm:
KIM, Youn Gwon (KR)
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