Title:
SYNCHRONIZATION ACCURACY DETECTING METHOD AND SYSTEM, ABERRATION DETECTING METHOD AND SYSTEM, AND COMPUTER PROGRAM
Document Type and Number:
WIPO Patent Application WO/2006/054496
Kind Code:
A1
Abstract:
A resist film is formed on a wafer (W), exposure process is performed to the resist film by using, for instance, a photomask having a pattern wherein circular patterns are laterally and longitudinally arranged, and the resist film is developed. The shape of a hole formed on the resist film is measured by using the pattern by scatterometry technology, obtained spectral reflection spectrum is analyzed, and its shape is compared with a pattern shape of the photomask. As a result, when a synchronization accuracy is excellent, the process shifts to a product wafer processing step, and when the synchronization accuracy is not acceptable, an alarm is given and an operator checks the exposure equipment.
Inventors:
SAWAI KAZUO (JP)
SONODA AKIHIRO (JP)
SONODA AKIHIRO (JP)
Application Number:
PCT/JP2005/020740
Publication Date:
May 26, 2006
Filing Date:
November 11, 2005
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
SAWAI KAZUO (JP)
SONODA AKIHIRO (JP)
SAWAI KAZUO (JP)
SONODA AKIHIRO (JP)
International Classes:
H01L21/027; G03F7/20
Domestic Patent References:
| WO2003001297A2 | 2003-01-03 | |||
| WO2001097279A2 | 2001-12-20 |
Foreign References:
| JP2004235460A | 2004-08-19 | |||
| JP2004200680A | 2004-07-15 | |||
| JP2002158169A | 2002-05-31 |
Attorney, Agent or Firm:
Takayama, Hiroshi (Daiichi Shinwa Building 10-8, Akasaka 2-chom, Minato-ku Tokyo, JP)
Download PDF: