Title:
SYNTHETIC ANTIFERROMAGNETIC MATERIAL AND MULTIBIT MEMORY USING SAME
Document Type and Number:
WIPO Patent Application WO/2021/020736
Kind Code:
A1
Abstract:
Disclosed are a synthetic antiferromagnetic material using RKKY interaction and a multibit memory using the synthetic antiferromagnetic material that is formed. The synthetic antiferromagnetic material has a non-magnetic metal layer as an RKKY inducing layer in the center, interaction between upper and lower ferromagnetic layers is imparted according to the thickness of the RKKY inducing layer, and the magnetization of an anti-parallel state is maximized therebetween. When such synthetic antiferromagnetic materials are stacked with each other and tunnel barrier layers are provided therebetween, multibits can be stored. Namely, data may be stored by supplying a program current in parallel to the surface of the RKKY inducing layer, and a resistance state may be checked by supplying current in a vertical direction to the surface of the RKKY inducing layer.
Inventors:
HONG JIN PYO (KR)
Application Number:
PCT/KR2020/008101
Publication Date:
February 04, 2021
Filing Date:
June 23, 2020
Export Citation:
Assignee:
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
H01L43/08; G11C11/56; H01L43/02; H01L43/10
Foreign References:
| KR20150134994A | 2015-12-02 | |||
| KR20170045692A | 2017-04-27 | |||
| KR20130015928A | 2013-02-14 | |||
| JP2008252036A | 2008-10-16 | |||
| KR20180043696A | 2018-04-30 |
Attorney, Agent or Firm:
E-SANG PATENT & TRADEMARK LAW FIRM (KR)
Download PDF: