Title:
SYSTEMS AND METHODS FOR EPITAXIALLY DEPOSITING FILMS
Document Type and Number:
WIPO Patent Application WO2002084710
Kind Code:
A3
Abstract:
Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprise a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devides, and through a showerhead. In one embodiment of the present invention, the system is capable of utilizing silane as a silicon source gas. In another embodiment of the present invention, the lift pin mechanism that raises a substrate off a susceptor is capable of rotating with the susceptor during processing.
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Inventors:
JOHNSGARD KRISTAIN E
SALLOWS DAVID E
MESSINEO DANIEL L
MAILHO ROBERT D
JOHNSGARD MARK W
SALLOWS DAVID E
MESSINEO DANIEL L
MAILHO ROBERT D
JOHNSGARD MARK W
Application Number:
PCT/US2002/011595
Publication Date:
February 06, 2003
Filing Date:
April 12, 2002
Export Citation:
Assignee:
MATTSON TECH INC (US)
International Classes:
C23C16/455; C23C16/458; C23C16/46; C30B25/08; C30B25/14; H01L21/00; H01L21/205; H01L21/687; C23C16/44; (IPC1-7): C23C16/00; C23F1/00
Foreign References:
| US5269847A | 1993-12-14 | |||
| US6139641A | 2000-10-31 | |||
| US5772771A | 1998-06-30 | |||
| US6200634B1 | 2001-03-13 | |||
| US5879459A | 1999-03-09 | |||
| US6413884B1 | 2002-07-02 | |||
| US6223684B1 | 2001-05-01 |
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