Title:
SYSTEMS AND METHODS HAVING A METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTOR WITH BURIED OXIDE LAYER
Document Type and Number:
WIPO Patent Application WO2005024897
Kind Code:
A3
Abstract:
Described herein is an MSM photodetector device wherein a dielectric layer is positioned between the absorbing layer and the substrate layer in order to decrease the device capacitance and thereby increasing the photodetector bandwidth. The dielectric layer increases the photodetector efficiency and blocks slow moving carriers from the high field drift region. The dielectric layer may be an oxide layer formed by one of wet thermal oxidation of A1GaAs, ion implantation, or wafer bonding with subsequent substrate removal.
Inventors:
WIPIEJEWSKI TORSTEN
Application Number:
PCT/IB2004/003246
Publication Date:
July 07, 2005
Filing Date:
September 03, 2004
Export Citation:
Assignee:
SAE MAGNETICS HK LTD (CN)
International Classes:
H01L21/00; H01L31/00; H01L31/108; H01L33/00; H01L; (IPC1-7): H01L31/00; H01L21/00
Foreign References:
| CN1238565A | 1999-12-15 | |||
| US5061977A | 1991-10-29 | |||
| JP2003023175A | 2003-01-24 | |||
| EP0627771A1 | 1994-12-07 | |||
| US20030164444A1 | 2003-09-04 |
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